Octo ber 200 5
BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
D
S
Features
? 0.22 A, 50 V. R DS(ON) = 3.5 ? @ V GS = 10 V
R DS(ON) = 6.0 ? @ V GS = 4.5 V
? High density cell design for extremely low R DS(ON)
? Rugged and Reliable
? Compact industry standard SOT-23 surface mount
package
D
G
S
SOT-23
G
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
50
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
0.22
A
– Pulsed
0.88
P D
Maximum Power Dissipation
Derate Above 25 ° C
(Note 1)
0.36
2.8
W
mW/ ° C
T J , T STG
T L
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
? 55 to +150
300
° C
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
350
° C/W
Package Marking and Ordering Information
Device Marking
SS
Device
BSS138
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 200 5 Fairchild Semiconductor Corporation
BSS138 Rev C (W)
相关PDF资料
BSS138DW-7 MOSFET DUAL N-CHAN 50V SC70-6
BSS138K MOSFET N-CH 50V 220MA SOT-23-3
BSS138LT1 MOSFET N-CH 50V 200MA SOT-23
BSS138TC MOSFET N-CHAN 50V SOT23-3
BSS138W-7 MOSFET N-CH 50V 200MA SC70-3
BSS138W MOSFET N-CH 50V 21MA SOT323
BSS84-7 MOSFET P-CH 50V 130MA SOT23-3
BSS84_D87Z MOSFET P-CH 50V 130MA SOT-23
相关代理商/技术参数
BSS138_NL 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R
BSS138_Q 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS138_SB9G001 制造商:Fairchild Semiconductor Corporation 功能描述:MODE FIELD EFFECT TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:BSS 138 SOT23 FSC
BSS1387 制造商:Diodes Incorporated 功能描述:
BSS138-7 功能描述:MOSFET 60V 360mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS138-7-F 功能描述:MOSFET 300mW 50V DSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS138-7-F-31 制造商:DIODES 功能描述:N-Channel MOSEFT/ SOT-23(LEAD-FREE)
BSS138AKA 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.2A SOT-2 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.2A, SOT-23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.2A, SOT-23, Transistor Polarity:N Channel, Continuous Drain